Actividades de I+D en IGFAE/USC

Pablo Vázquez (IGFAE-USC)

IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALESMadrid, 2-3 Diciembre 2009

P. Vázquez 2IV jornadas FLC, Madrid, 2-3 Dec 2009

R&D activities at Santiago R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project

Belle II PXD PS system Sensor characterization (Lab, testbeams) Gamma irradiation (Co-60)

FTD simulations

Personnel dedicated: 5 FTE Pablo Vázquez, Abraham Gallas, Daniel Esperante,

Jevgenij Visniakov, Eliseo Pérez, Javier Caride

P. Vázquez 3IV jornadas FLC, Madrid, 2-3 Dec 2009

R&D in pixel detectors CERN + LHCb + Timepix/Medipix collaboration

2 test beams summer 2009 at CERN Telescope (6) + DUT made with Timepix 55 um pixel size 300 um thickness Hit resolution ~5 um Track resolution ~2.6 um

P. Vázquez 4IV jornadas FLC, Madrid, 2-3 Dec 2009

R&D in pixel detectors Timepix/Medipix collaboration is working in

adapting the Timepix ASIC for HEP experiments Since we have obtained very good results in

testbeamsa) The LHCb VELO upgrade group has decided to

choose the timepix as baseline pixel solutionb) LHCb + Timepix/Medipix has decided to build an

upgraded version of the Timepix telescope

P. Vázquez

R&D in pixel detectors

a) USC in collaboration with the CNM, Glasgow and CERN are building thinned pixel detectors 2D sensors thinned up to 200, 150 and 100 um To be readout with the Timepix and characterized as

function of the thickness Charge sharing Efficiency Time of arrival measurements

Sensors are being produced now Bumpbonding tryout also in the CNM Possible design variations under discussion

Elongated pixels at 1st row, edgless, gard rings

5IV jornadas FLC, Madrid, 2-3 Dec 2009

P. Vázquez 6IV jornadas FLC, Madrid, 2-3 Dec 2009

R&D in pixel and microstrips silicon sensors

b) Telescope based on Timepix with following characteristics Active area: 2.8x2.8 cm2 Resolucion: 2 um, 1 ns Readout rate: 75 kHz

To be used in R&D in detectors for ILC or LHC upgrades with the contribution of the USC Timing Unit, integration of the DUT daq in the DAQ of the

telescope Mechanics of the DUT Cold box to work with irradiated sensors in the test beam

P. Vázquez

R&D in microstrips silicon detectors In case the pixel option cannot meet the physics and

time scale requirements, the silicon strip option should hold for LHCb VELO upgrade

The strip option should stay as close as possible to the current design improving its performance 40 MHz readout Higher granularity (x10 luminosity increase) Impact Parameter resolution Radiation hardness

USC wants to participate in the design and characterization of the new sensors, in the module assembly and tests with particle beams at CERN

Very useful for the FTD conception of ILC

IV jornadas FLC, Madrid, 2-3 Dec 2009 7

P. Vázquez

R&D in microstrips silicon detectors 1 module assembled in Santiago to be tested in the lab

and in testbeam IT hybrid (3 beetles) + 2 pitch adapters + PR01

Hamamatsu sensor

IV jornadas FLC, Madrid, 2-3 Dec 2009 8

P. Vázquez 9IV jornadas FLC, Madrid, 2-3 Dec 2009

DEPFET: Belle II PXD PS system

50cm 2m

44 half-modules 17 voltages per

half-module Regulation cards

on radiation and B-field enviroment

22 x half-module

P. Vázquez 10IV jornadas FLC, Madrid, 2-3 Dec 2009

DEPFET: Belle II PXD PS system

Regul.DHH

PXD

PS

Regul.DHH

PSElectronics

hutNo radiation

~krad + H field

Belle layout

750 voltages1500 lines

> 500W

P. Vázquez 11IV jornadas FLC, Madrid, 2-3 Dec 2009

DEPFET: sensor characterization Lab test

Gain (radioactive source), charge collection (laser) Dependence with radiation

241Am source on aPXD5 matrix

P. Vázquez 12IV jornadas FLC, Madrid, 2-3 Dec 2009

DEPFET: sensor characterization Testbeams

TB09 data taking and analysis Future testbeams

Irradiated module Power supply prototype

P. Vázquez 13IV jornadas FLC, Madrid, 2-3 Dec 2009

DEPFET: 2009 test beam analysis

Eutelescope framework installed, some procesors working

P. Vázquez

Gamma irradiation Failed depfet PXD5 module irradiation this summer

Module dead before irradiation

PXD5 matrices being tested in Karlsruhe and Santiago Dec 09 up to 10Mrad

PXD6 matrices will be irradiated next year14IV jornadas FLC, Madrid, 2-3 Dec 2009

P. Vázquez

ASIC development In collaboration with Grupo de Vision Artificial at

USC a project was submitted to Xunta de Galicia to produce in Tezzaron, using TSVs, a 3D pixel readout chip demonstrator for HEP applications CMOS 3D 130nm technology 64x64 pixels of 40x40 um pixel size 4 layers

Sensor: pn diode Signal conditioning: amplification, test pulse,

comparator Signal processing: time stamping, counter, time over

threshold, 8bit memory Readout

Possible incorporation to R&D for FLC project in 2013

15IV jornadas FLC, Madrid, 2-3 Dec 2009

P. Vázquez 16IV jornadas FLC, Madrid, 2-3 Dec 2009

Summary on R&D activities in the USC R&D in pixel detectors R&D in microstrips silicon detectors DEPFET project

Belle II PXD PS system Sensor characterization (Lab, testbeams) Gamma irradiation (Co-60)

FTD simulations